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| 2SD427 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD427
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High Power Dissipation-
: PC= 80W(Max)@TC=25â
·Complement to Type 2SB557
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 50W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IE
Emitter Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-8
A
80
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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