2SD426 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD426
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High Power Dissipation-
: PC= 100W(Max)@TC=25℃
·Complement to Type 2SB556
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for high-fidelity audio frequency amplifier
output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark