2SD389 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – LOW FREQUENCY POWER AMPLIFIER(NPN)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD389
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 60V(Min)
·Wide Area of Safe Operation
·High Power Dissipation
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
60
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3.0
A
25
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn