2SD382 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD382
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min.)
·Complement to Type 2SB537
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency power amplifier, low speed switching.
·Suitable for driver of 60~100 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3.0
A
IB
Base Current
0.3
A
Collector Power Dissipation@TC=25℃
20
PC
W
Collector Power Dissipation@Ta=25℃
1.5
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
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