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2SD380 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Si NPN Triple Diffused Junction Mesa | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD380
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
ICM
Collector Current-Peak
7
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TCâ¤90â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3.5
A
50
W
130
â
-65~130
â
isc Websiteï¼www.iscsemi.cn
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