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2SD363 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD363
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Collector Power Dissipation-
: PC= 40W(Max)@ TC= 25â
APPLICATIONS
·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
40
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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