2SD345 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD345
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 55V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max) @IC= 2.0A
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Peak
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
70
V
55
V
6
V
3
A
5
A
1
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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