2SD334 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SI NPN DIFFUSED JUCTION MESA

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD334
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
110
V
V_CEO
Collector-Emitter Voltage
80
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
6
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
3
A
75
W
150
℃
-65~150 ℃
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