2SD331 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Low Frequency Power Amp Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD331
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A
·Complement to Type 2SB515
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Especially suited for use in output stage of 10W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
5
A
1.75
W
20
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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