2SD313 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD313
DESCRIPTION
·With TO-220C package
·Complement to type 2SB507
·Low collector saturation voltage
APPLICATIONS
·Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_BB
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rθjc
Thermal resistance junction to case
·
VALUE
60
60
5
3
8
1
30
150
-50~150
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
4.16
UNIT
℃/W