2SD312 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD312
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=100℃
Tj
Junction Temperature
1
A
25
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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