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2SD311 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD311
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
6
A
150
W
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
â/W
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
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