2SD299 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD299
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 4.5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5.0
A
ICM
Collector Current-Peak
8.0
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=90℃
TJ
Junction Temperature
2.5
A
16
W
115
℃
Tstg
Storage Temperature
-65~115 ℃
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