2SD289 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD289
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 55V(Min)
·Collector Power Dissipation-
: PC= 25W(Max)@ TC= 25℃
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power regulator, low frequency high power
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.0
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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