2SD2689 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High speed.
·High breakdown voltage(VCBO=1500V).
·High reliability(Adoption of HVP process).
isc Product Specification
2SD2689
APPLICATIONS
·Designed for Color TV Horizontal Deflection
Output Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
25
A
IB
Base Current-Continuous
3.5
A
Total Power Dissipation @TC=25℃
35
PT
W
Total Power Dissipation @Ta=25℃
2.0
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.com
isc & iscsemi is registered trademark