 English |
|
|
|
|
|
|
|
| 2SD2642 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2642
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 5A, VCE= 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB=B 5mA)
·Complement to Type 2SB1687
APPLICATIONS
·Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
30
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese