2SD2633 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2633
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) =1.5V(Max)@ IC= 6A
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
1
A
35
W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
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