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| 2SD2583 Datasheet, PDF (1/2 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2583
DESCRIPTION
·High Collector Current-IC= 5A
·Low Saturation Voltage -
: VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA
·High DC Current Gain-
: hFE= 150~600@ IC= 1A
APPLICATIONS
·Designed for audio frequency amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5.0
A
ICP
Collector Current-Pulse
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2.0
A
1.0
W
10
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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