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| 2SD2562 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon NPN Triple Diffused Planar Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA)
·Complement to Type 2SB1649
APPLICATIONS
·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
85
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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