 English |
|
|
|
|
|
|
|
| 2SD2558 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2558
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High DC Current Gain-
: hFE= 1500( Min.) @(IC= 1A, VCE= 5V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB=B 5mA)
APPLICATIONS
·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
2
A
60
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese