 English |
|
|
|
|
|
|
|
| 2SD2549 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2549
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Low Collector Saturation Voltgae-
: VCE(sat)= 0.7V(Max.)@ IC= 3A
·Good Linearity of hFE
APPLICATIONS
·Designed for power amplifier applications.
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature
5
A
20
W
2
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese