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| 2SD2524 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2524
DESCRIPTION
·High Breakdown Voltage-
ï¼VCBO= 1700V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
ICM
Collector Current-Peak
1700
V
5
V
8
A
20
A
IBM
Base Current-Peak
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
100
W
3
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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