2SD2500 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2500
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for Color TV horizontal deflection output
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
600
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
10
A
I_CP
Collector Current- Pulse
20
A
I_BB
Base Current- Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
5
A
50
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn