2SD2490 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2490
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High DC current gain
: hFE= 1000(Min) @IC= 1A
·Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio ,regulator and general purpose
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1
A
85
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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