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| 2SD2449 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2449
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·High DC Current Gain-
: hFE= 3000( Min.) @(IC= 8A, VCE= 5V)
·Low Collector Saturation Voltage-
: VCE(sat)= 3.0V(Max)@ (IC= 8A, IB=B 8mA)
·Complement to Type 2SB1594
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
150
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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