2SD2422 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2422
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 3A
·High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
APPLICATIONS
·High power switching applications
·Hammer driver,pulse motor driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
10
A
30
W
2.0
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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