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2SD2399 Datasheet, PDF (1/2 Pages) Rohm – Transistor,NPN,Darlington | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2139
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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