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2SD2397 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2397
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min) @IC= 1A
·Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
·Built-in zener diode between collector and base
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motorï¼Relay drive
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
3
A
2.0
W
20
150
â
Tstg
Storage Temperature Range
-55~150
â
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