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| 2SD2384 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLI DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2384
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·High DC Current Gain-
: hFE= 5000(Min)@IC= 6A
·Complement to Type 2SB1555
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.1
A
100
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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