2SD2328 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2328
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A
·High Power Dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1.5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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