2SD2300 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2300
DESCRIPTION
With TO-3PML package
High breakdown voltage
Built-in damper diode
APPLICATIONS
For color TV horizontal output deflection
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T_a=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_C(surge)
P_C
Collector surge current
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open collector
T_C=25
VALUE
1500
6
5
6
16
50
150
-55~150
UNIT
V
V
A
A
A
W