2SD2271 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (MOTOR DRIVER, HIGH CURRENT SWITCHING APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2271
DESCRIPTION
·High DC Current Gain-
: hFE= 500(Min)@ (VCE= 2V, IC= 5A)
·High Breakdown Voltage :VCEO(sus)=200V（Min）
APPLICATIONS
·Motor drive applications
·High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Peak
18
A
IB
Base Current
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
2.0
W
30
150
℃
-55~150
℃
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