2SD2257 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2257
DESCRIPTION
With TO-220F package
High DC current gain
Low saturation voltage
Complement to type 2SB1495
DARLINGTON
APPLICATIONS
High power switching applications
Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
100
100
8
3
5
0.3
2.0
20
150
-55~150
UNIT
V
V
V
A
A
A
W