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| 2SD2256 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2256
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
35
A
120
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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