2SD2241 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2241
DESCRIPTION
With TO-220F package
High DC current gain : h _FE=2000 (Min)
Low saturation voltage
Complement to type 2SB1481
DARLINGTON
APPLICATIONS
With switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
100
100
5
4
6
0.3
2.0
25
150
-55~150
UNIT
V
V
V
A
A
A
W