 English |
|
|
|
|
|
|
|
| 2SD2237 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2237
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= 2A
·Low Collector Saturation Voltage-
: VCE(sat) = 2.0V(Max.) @IC= 5A
·Complement to Type 2SB1478
APPLICATIONS
·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
8
A
60
W
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese