2SD2236 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2236
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 100V(Min.)
·Wide Area of Safe Operation
·Complement to Type 2SB1477
APPLICATIONS
·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
100
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
5
A
60
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
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