2SD2165 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2165
DESCRIPTION
·High DC Current Gain-
: hFE= 800(MIN)@ (VCE= 5V, IC= 1A)
·Low Collector-Emitter Saturation Voltage
: VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA)
APPLICATIONS
·Designed for use low frequency amplifilier and low
switching speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
2
W
30
150
℃
-55~150
℃
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