2SD2161 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
Product Specification
2SD2161
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA)
APPLICATIONS
·Designed for low-frequency power amplifiers and low-
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
0.5
A
2
W
20
150
℃
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}