2SD2155 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2155
DESCRIPTION
With TO-3PL package
Complement to type 2SB1429
APPLICATIONS
Power amplifier applications
Recommend for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
180
180
5
15
1.5
150
150
-55~150
UNIT
V
V
V
A
A
W