2SD2141 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Ignitor, Driver for Solenoid and Motor, and General Purpose)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2141
DESCRIPTION
·High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 4A
·Incorporating a built-in zener diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in ignitor, driver for solenoid，motor and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Base Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
330-430
V
330-430
V
6
V
6
A
10
A
1
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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