2SD2140 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2140
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 140V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SB1421
APPLICATIONS
·Designed for high power amplifications.
·Optimum for the output stage of a HiFi audio amplifier
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
140
V
V_CEO
Collector-Emitter Voltage
140
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
7
A
I_CP
Collector Current-Pulse
Collector Power Dissipation
@ T_C=25℃
P_C
Collector Power Dissipation
@ T_a=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
12
A
80
W
2.5
150
℃
-55~150
℃
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