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2SD2083 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2083
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
·Complement to Type 2SB1383
APPLICATIONS
·Designed for driver of solenoid, motor and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
120
W
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn