2SD2055 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2055
DESCRIPTION
·High DC Current Gain -
: hFE =20(Min)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
10
IB
Base Current
6
PC
Collector Power Dissipation
@ TC=25℃
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
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