2SD2047 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2047
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Speed Switching
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
700
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current- Continuous
5
A
I_CP
Collector Current-Pulse
10
A
I_BB
Base Current- Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3
A
80
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case 1.55 ℃/W
isc Website：www.iscsemi.cn