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2SD2045 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2045
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 2V
APPLICATIONS
·Designed of driver of solenoid,motor and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
50
W
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn