2SD1988 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1988
DESCRIPTION
·High DC Current Gain-
: hFE = 3000(Min)@ IC= 1A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·Incorporating a built-in zener diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Low-frequency amplifications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40-50
V
VCEO
Collector-Emitter Voltage
40-50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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