2SD1986 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1986
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 3A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching applications.
·Hammer drive, pulse motor drive applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
4
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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