2SD1976 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1976
DESCRIPTION
·Fast Switching Speed
·High DC Current Gain
·Built-in high voltage zener diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High voltage switching
·Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
10
A
40
W
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}