2SD1966 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1966
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.7
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1.5
A
5
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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